A scheme for spin transistor with extremely large on/off current ratio
نویسندگان
چکیده
منابع مشابه
4 A spin field effect transistor for low leakage current
In a spin field effect transistor, a magnetic field is inevitably present in the channel because of the ferromagnetic source and drain contacts. This field causes random unwanted spin precession when carriers interact with non-magnetic impurities. The randomized spins lead to a large leakage current when the transistor is in the " off "-state, resulting in significant standby power dissipation....
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We propose and analyze a novel dual-gate Spin Field Effect Transistor (SpinFET) with half-metallic ferromagnetic source and drain contacts. The transistor has two gate pads that can be biased independently. It can be switched ON or OFF with a few mV change in the differential bias between the two pads, resulting in extremely low dynamic power dissipation during switching. The ratio of ON to OFF...
متن کاملQuantum spin transistor with a Heisenberg spin chain
Spin chains are paradigmatic systems for the studies of quantum phases and phase transitions, and for quantum information applications, including quantum computation and short-distance quantum communication. Here we propose and analyse a scheme for conditional state transfer in a Heisenberg XXZ spin chain which realizes a quantum spin transistor. In our scheme, the absence or presence of a cont...
متن کامل9 S ep 2 00 4 A spin field effect transistor for low leakage current
In a spin field effect transistor, a magnetic field is inevitably present in the channel because of the ferromagnetic source and drain contacts. This field causes random unwanted spin precession when carriers interact with non-magnetic impurities. The randomized spins lead to a large leakage current when the transistor is in the " off "-state, resulting in significant standby power dissipation....
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ژورنال
عنوان ژورنال: Journal of Applied Physics
سال: 2008
ISSN: 0021-8979,1089-7550
DOI: 10.1063/1.3050326